Datasheet > 2SJ550(L)|2SJ550(S)

2SJ550(L)|2SJ550(S)

更新时间： 2024-11-06 23:20:35

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2SJ550(L)|2SJ550(S) 数据手册

2SJ550(L), 2SJ550(S)

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-633A (Z)

2nd. Edition

Jul. 1998

Features

•

Low on-resistance

R_DS(on)= 0.075Ω typ.

•

Low drive current.

4V gate drive devices.

High speed switching.

Outline

LDPAK

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...12

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型号	品牌	获取价格	描述	数据表
2SJ550(S)	HITACHI	获取价格	Power Field-Effect Transistor, 0.155ohm, LDPAK-3
2SJ550(S)	RENESAS	获取价格	0.155ohm, POWER, FET, LDPAK-3
2SJ550L	HITACHI	获取价格	Silicon P Channel MOS FET High Speed Power Switching
2SJ550L	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ550L-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ550S	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ550S	HITACHI	获取价格	Silicon P Channel MOS FET High Speed Power Switching
2SJ550S-E	RENESAS	获取价格	15A, 60V, 0.155ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3
2SJ550STL-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ551	RENESAS	获取价格	Silicon P Channel MOS FET